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CD99 regulates the transport of MHC class I molecules from the Golgi complex to the cell surface
- Sohn, HW;
- Shin, YK;
- Lee, IS;
- Bae, YM;
- Suh, YH;
- ... Kim, IS;
- 외 11명
WEB OF SCIENCE
55SCOPUS
60초록
The down-regulation of surface expression of MHC class I molecules has recently been reported in the CD99-deficient lymphoblastoid B cell line displaying the characteristics of Hodgkin's and Reed-Sternberg phenotype. Here, we demonstrate that the reduction of MHC class I molecules on the cell surface is primarily due to a defect in the transport from the Golgi complex to the plasma membrane. Loss of CD99 did not affect the steady-state expression levels of mRNA and protein of MHC class I molecules. In addition, the assembly of MHC class I molecules and the transport from the endoplasmic reticulum to the cis-Golgi occurred normally in the CD99-deficient cells, and no difference was detected between the CD99-deficient and the control cells in the pattern and degree of endocytosis. Instead, the CD99-deficient cells displayed the delayed transport of newly synthesized MHC class I molecules to the plasma membrane, thus causing accumulation of the molecules within the cells. The accumulated MHC class I molecules in the CD99-deficient cells were colocalized with alpha -mannosidase II and gamma -adaptin in the Golgi compartment, These results suggest that CD99 may be associated with the post-Golgi trafficking machinery by regulating the transport to the plasma membrane rather than the endocytosis of surface MHC class I molecules, providing a novel mechanism of MHC class I downregulation for immune escape.
키워드
- 제목
- CD99 regulates the transport of MHC class I molecules from the Golgi complex to the cell surface
- 저자
- Sohn, HW; Shin, YK; Lee, IS; Bae, YM; Suh, YH; Kim, MK; Kim, TJ; Jung, KC; Park, WS; Park, CS; Chung, DH; Ahn, K; Kim, IS; Ko, YH; Bang, YJ; Kim, CW; Park, SH
- 발행일
- 2001-01
- 유형
- Article
- 권
- 166
- 호
- 2
- 페이지
- 787 ~ 794
- 언어
- ENG
- 출판사
- American Association of Immunologists
- 발행국가
- 미국
- 분량
- 8 페이지
- ISSN
- E 1550-6606
P 0022-1767